amplifiers - low noise - chip 1 1 - 14 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com hmc342 gaas mmic low noise amplifier, 13 - 25 ghz v01.0907 general description features functional diagram the hmc342 chip is a gaas mmic low noise ampli er (lna) which covers the frequency range of 13 to 25 ghz. the chip can easily be integrated into multi-chip modules (mcms) due to its small (2.14 mm 2 ) size. the chip utilizes a gaas phemt process offering 20 db gain from a single bias supply of +3v @ 41ma with a noise gure of 3.5 db. all data is with the chip in a 50 ohm test xture con- nected via 0.025 mm (1 mil) diameter wire bonds of minimal length 0.31 mm (<12 mils). noise figure : 3.5 db gain: 20 db single supply : +3v @ 41ma small size: 1.06 x 2.02 mm electrical speci cations, t a = +25 c, vdd = +3v typical applications the hmc342 is ideal for: ? microwave point-to-point radios ? millimeterwave point-to-point radios ? vsat & satcom parameter min. typ. max. units frequency range 13 - 25 ghz gain 16 21 26 db gain variation over temperature .03 .04 db/c noise figure 3.5 4.5 db input return loss 6 13 db output return loss 6 14 db reverse isolation 39 45 db output power for 1db compression (p1db) 1 5 dbm saturated output power (psat) 3 8 dbm output third order intercept (ip3) 8 13 dbm supply current (idd)(vdd = +3v) 41 55 ma
amplifiers - low noise - chip 1 1 - 15 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com noise figure vs. temperature @ vdd = +3v return loss @ vdd = +3v return loss @ vdd = +5v gain vs. temperature @ vdd = +3v gain vs. temperature @ vdd = +5v noise figure vs. temperature @ vdd = +5v 10 15 20 25 30 12 14 16 18 20 22 24 26 +25 c -55 c +85 c gain (db) frequency (ghz) 0 1 2 3 4 5 6 12 14 16 18 20 22 24 26 +25 c -55 c +85 c noise figure (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 12 14 16 18 20 22 24 26 s11 s22 return loss (db) frequency (ghz) 0 1 2 3 4 5 6 12 14 16 18 20 22 24 26 +25 c -55 c +85 c noise figure (db) frequency (ghz) -30 -25 -20 -15 -10 -5 0 12 14 16 18 20 22 24 26 s11 s22 return loss (db) frequency (ghz) 10 15 20 25 30 12 14 16 18 20 22 24 26 +25 c -55 c +85 c gain (db) frequency (ghz) hmc342 gaas mmic low noise amplifier, 13 - 25 ghz v01.0907
amplifiers - low noise - chip 1 1 - 16 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com output ip3 @ vdd = +3v output ip3 @ vdd = +5v isolation gain & noise figure vs. supply voltage @ 18 ghz output p1db @ vdd = +3v output p1db @ vdd = +5v 0 2 4 6 8 10 12 14 12 14 16 18 20 22 24 26 +25 c -55 c +85 c p1db (dbm) frequency (ghz) -70 -60 -50 -40 -30 -20 -10 0 12 14 16 18 20 22 24 26 vdd = +3v vdd = +5v isolation (db) frequency (ghz) 5 10 15 20 25 30 12 14 16 18 20 22 24 26 +25 c -55 c +85 c ip3 (dbm) frequency (ghz) 5 10 15 20 25 30 12 14 16 18 20 22 24 26 +25 c -55 c +85 c ip3 (dbm) frequency (ghz) 0 2 4 6 8 10 12 14 12 14 16 18 20 22 24 26 +25 c -55 c +85 c p1db (dbm) frequency (ghz) 20.8 20.9 21 21.1 21.2 21.3 21.4 2.8 3 3.2 3.4 3.6 3.8 4 2.5 3 3.5 4 4.5 5 5.5 gain db) noise figure (db) vdd supply voltage (vdc) hmc342 gaas mmic low noise amplifier, 13 - 25 ghz v01.0907
amplifiers - low noise - chip 1 1 - 17 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com outline drawing absolute maximum ratings drain bias voltage (vdd) +5.5 vdc rf input power (rfin)(vdd = +3 vdc) -5 dbm channel temperature 175 c continuous pdiss (t = 85 c) (derate 3.62 mw/c above 85 c) 0.326 w thermal resistance (channel to die bottom) 276 c/w storage temperature -65 to +150 c operating temperature -55 to +85 c notes: 1. all dimensions are in inches [mm] 2. die thickness is .004 3. typical bond is .004 square 4. backside metallization: gold 5. bond pad metallization: gold 6. backside metal is ground. 7. connection not required for unlabeled bond pads. electrostatic sensitive device observe handling precautions die packaging information [1] standard alternate gp-2 (gel pack) [2] [1] refer to the packaging information section for die packaging dimensions. [2] for alternate packaging information contact hittite microwave corporation. hmc342 gaas mmic low noise amplifier, 13 - 25 ghz v01.0907
amplifiers - low noise - chip 1 1 - 18 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com assembly diagrams pad number function description interface schematic 1rfin this pad is ac coupled and matched to 50 ohms. 2rfout this pad is ac coupled and matched to 50 ohms. 3vdd power supply for the 2-stage ampli er. an external rf bypass capaci- tor of 100 - 300 pf is required. the bond length to the capacitor should be as short as possible. the ground side of the capacitor should be connected to the housing ground. pad descriptions hmc342 gaas mmic low noise amplifier, 13 - 25 ghz v01.0907
amplifiers - low noise - chip 1 1 - 19 for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy ( see hmc general handling, mounting, bonding note ). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin lm substrates are recommended for bringing rf to and from the chip (figure 1). if 0.254mm (10 mil) thick alumina thin lm substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (figure 2). microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). an rf bypass capacitor should be used on the vdd input. a 100 pf single layer capacitor (mounted eutectically or by conductive epoxy) placed no further than 0.762mm (30 mils) from the chip is recommended. handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protective containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick-up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and at. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom- mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31 mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab hmc342 gaas mmic low noise amplifier, 13 - 25 ghz v01.0907
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